A 16-element reflection grid amplifier with improved heat sinking

Author

Guyette, Andrew ; Swisher, R. ; Lecuyer, F. ; Al-Zayed, A. ; Kom, A. ; Su-Tak Lei ; Oliveira, M. ; Ping Li ; De Lisio, M. ; Sato, K. ; Oki, A. ; Gutierrez-Aitken, A. ; Kagiwada, R. ; Cowles, J.

Author_Institution

Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1839

Abstract

We present a 16-element hybrid grid amplifier with improved heat sinking. This is a higher-power version of a previously reported reflection grid amplifier. The grid uses custom-made differential-pair chips with TRW InP Heterojunction Bipolar Transistors (HBTs) as the active devices. We measure a peak gain of 15 dB at 8.4 GHz. Measured gain is consistent with theoretical predictions. The grid was able to dissipate up to 4 W of dc bias power without any apparent thermal damage. Measurements on passive resistor arrays demonstrate this architecture´s superior thermal performance.

Keywords

III-V semiconductors; heat sinks; heterojunction bipolar transistors; indium compounds; microwave amplifiers; 15 dB; 4 W; 8.4 GHz; DC bias; InP; InP heterojunction bipolar transistor; active device; differential pair chip; gain; heat sink; hybrid reflection grid amplifier; passive resistor array; power dissipation; thermal characteristics; Gain measurement; Heat engines; Heat sinks; Indium phosphide; Optical reflection; Radiofrequency amplifiers; Resistance heating; Resistors; Semiconductor device measurement; Space heating;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967265

Filename

967265