DocumentCode
1930249
Title
Modeling of VIPMOS Hot Electron Gate Currents
Author
Hemink, G.J. ; Wijburg, R.C.M. ; Wolbert, P.B.M. ; Wallinga, H.
Author_Institution
MESA Research Institute, University of Twente, Faculty of Electrical Engineering, P.O. Box 217, 7500 AE Enschede, The Netherlands.
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
65
Lastpage
68
Abstract
A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices [1]. In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.
Keywords
Boltzmann equation; Distribution functions; Doping profiles; EPROM; Energy measurement; Microelectronics; Predictive models; Secondary generated hot electron injection; Semiconductor process modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5436251
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