Correction of the concentration profile of the epitaxially grown GaAs thin film layers, measured by electrolytic capacitance-voltage method

In this work we are dealing with the solution of a concentration profile measurement problem in the epitaxially grown III/V type compound semiconductor layers. The III/V based materials have specific electronic and optical properties, so they have large significance in the semiconductor device production. At these materials, the epitaxial growth is the fundamental technological step. During this epitaxial process is possible to change the doping concentration in the grown layer. In most cases, the electrolytic capacitance-voltage (ECV) technique serves for the measurement of this concentration profile. This method combines the conventional capacitance-voltage (CV) measurement with the anodic oxidation, to avoid the electrical break-down at the junction. The disadvantage of this method is that the contact surface increases during the measurement, because of the dissolution of the material. This surface growth - in certain layer structure - causes error in the measurement. In present work, we give a computational solution for this problem by our software, which we have developed in Matlab™. This algorithm calculates and summarizes the wall capacitance and subtract from the measured data, in each step. We demonstrate the operation of the program on different sample data series.