DocumentCode
1930877
Title
Extended static CV-procedure to investigate minority carrier generation in MOS capacitors
Author
Kerber, M. ; Schwalke, U.
Author_Institution
Siemens AG., Corporate Research and Development, Otto Hahn Ring 6, 8000 Munich 83, F.R. Germany
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
587
Lastpage
590
Abstract
An extension of the conventional static CV procedure is presented which explicitely monitors the equilibrium of MOS capacitors throughout the CV sweep. Simultaneously to the static capacitance the minority carrier generation current is deduced by analyzing the time dependent displacement charge.
Keywords
Capacitance measurement; Charge measurement; Current measurement; Diodes; Displacement measurement; MOS capacitors; Performance analysis; Research and development; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436286
Link To Document