Influence of kink effect on the dynamic and noise performance of short-channel InAlAs/InGaAs HEMTs

Author

Vasallo, B.G. ; Mateos, J. ; Pardo, D. ; González, T.

Author_Institution

Departamento de Fisica Aplicada, Univ. de Salamanca, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

123

Lastpage

126

Abstract

We perform a microscopic analysis of the degradation originated by the kink effect in the dynamic and noise performance of short-channel InAlAs/InGaAs lattice matched HEMTs by using a 2D ensemble Monte Carlo simulator. The onset of kink effect leads to a significant increase of the drain conductance, whose frequency dependence reflects the influence of the processes at the origin of the kink effect. Concerning the noise performance, the kink effect provokes an enhancement in the drain- and gate-current noise at low frequency, with a characteristic cutoff frequency related to the impact ionization rate and hole recombination time.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device models; semiconductor device noise; 2D Monte Carlo simulator; InAlAs-InGaAs; drain conductance; drain-current noise; gate-current noise; high electron mobility transistor; hole recombination time; impact ionization rate; kink effect; microscopic analysis; noise performance; short-channel HEMT; Cutoff frequency; Degradation; HEMTs; Indium compounds; Indium gallium arsenide; Lattices; Low-frequency noise; MODFETs; Microscopy; Performance analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504327

Filename

1504327