High-accuracy digital 5-bit 0.8-2 GHz MMIC RF attenuator for cellular phones

Author

Kinayman, N. ; Bonilla, M. ; Kelcourse, M.F. ; Redus, J. ; Anderson, K.

Author_Institution

Corp. Res. & Dev., M/A-COM Inc., Lowell, MA, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

2231

Abstract

High-accuracy digital MMIC RF attenuator for cellular phones is presented. Designing high accuracy digital MMIC RF attenuators is challenging due to the non-ideal characteristics of the transistor switches used in the attenuator and other parasitic effects. This problem can be circumvented by simultaneous optimization of the attenuator circuit at every possible input bit configuration. Without this optimization scheme, it would be extremely difficult to compensate the non-ideal transistor switch characteristics to achieve high accuracy. A design methodology is presented.

Keywords

UHF integrated circuits; attenuators; cellular radio; circuit optimisation; field effect MMIC; field effect digital integrated circuits; field effect transistor switches; integrated circuit design; microwave switches; telephone sets; 0.8 to 2 GHz; 5 bit; attenuator circuit optimisation; cellular phones; design methodology; digital MMIC RF attenuator; high-accuracy RF attenuator; nonideal transistor switch characteristics; parasitic effects; transistor switches; Attenuation measurement; Attenuators; Cellular phones; Impedance; Linearity; MMICs; Manufacturing; Radio frequency; Resistors; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967360

Filename

967360