Radiation damage of 1.0 mm CMOS VLSI as a function of latchup immunity

Author

Saitoh, Y. ; Akiba, T. ; Konishi, H. ; Watanabe, H. ; Nonaka, K. ; Kamiya, M. ; Tsuboyama, T. ; Miura, T.

Author_Institution

SEIKO Instruments Inc., Torrance, CA, USA

fYear

1992

fDate

25-31 Oct 1992

Firstpage

788

Abstract

The radiation damage of CMOS VLSI as a function of latchup immunity has been examined. Substantial effects of neutrons and electrons on I_L (latchup current) have been found. There is an increase of I_L with neutron and electron dosage. A nonnegligible restoration was observed after subsequent annealing. The increase of I_L was found to be caused by degradation of I_C (h_FE). The degradation of I _c was observed as a function of base width. The degradation of I_c was absorbed principally by volume recombination rather than surface recombination. There is no problem with the latchup immunity of CMOS VLSI due to irradiation. From the manufacturer´s point of view, this result suggests a way of improving latchup immunity for advanced CMOS VLSIs

Keywords

CMOS integrated circuits; VLSI; electron beam effects; neutron effects; radiation effects; 1.0 mm; 1.0 mm CMOS VLSI; annealing; base width; degradation; electrons; latchup current; latchup immunity; neutrons; nonnegligible restoration; radiation damage; surface recombination; volume recombination; Annealing; CMOS technology; Degradation; Electrons; Fabrication; MOSFETs; Neutrons; Radiation effects; Radiative recombination; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301426

Filename

301426