• DocumentCode
    1931856
  • Title

    Accuracy of residual phase noise characterization of active RF/microwave devices

  • Author

    Thomas, Donald G. ; Branner, G.R.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Davis, CA, USA
  • Volume
    3
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    1371
  • Abstract
    Phase noise is widely recognized as a crucial parameter in many classes of microwave communication systems. Phase noise can deteriorate the signal-to-noise ratio and can cause severe problems in data fidelity in receiving systems. A precise measurement of phase noise characteristics is significant in the development of system architecture and component selection. The measurement accuracy of phase noise tests can be seriously corrupted by the effects of the bias supply of active devices being characterized for spectral density. This paper presents an in-depth analysis of accuracy problems encountered with such bias supply effects and provides a quantitative solution to these problems
  • Keywords
    UHF measurement; UHF transistors; electric noise measurement; microwave measurement; microwave transistors; phase noise; semiconductor device noise; semiconductor device testing; SNR; active RF devices; active microwave devices; bias supply effects; measurement accuracy; phase noise tests; residual phase noise characterization; signal-to-noise ratio; 1f noise; Bipolar transistors; Fluctuations; Microwave devices; Noise measurement; Phase measurement; Phase noise; Radio frequency; Testing; Vibrations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1996., IEEE 39th Midwest symposium on
  • Conference_Location
    Ames, IA
  • Print_ISBN
    0-7803-3636-4
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1996.593192
  • Filename
    593192