DocumentCode
1932134
Title
High-speed radiation-hardened ECL circuits on bonded SOI wafers
Author
Ueno, Katsunobu ; Kawano, Masanobu ; Arimoto, Yoshihiro
Author_Institution
Electronic Device Group, Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
377
Lastpage
380
Abstract
This paper describes ECL circuits with completely isolated transistors on bonded silicon-on-insulator (SOI) wafers. We have clarified the superiority of SOI circuits over bulk-silicon circuits in terms of circuit speed and alpha-particle-induced soft errors.
Keywords
Circuits; Electrodes; Isolation technology; Laboratories; Parasitic capacitance; Ring oscillators; Silicon; Time measurement; Transistors; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436339
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