DocumentCode
1932146
Title
Degradation and wearout of thin dielectric layers during charge injection
Author
Heyns, Mare M.
Author_Institution
Interuniversity Microelectronics Centre (IMEC vzw) Kapeldreef 75, B-3030 Leuven, BELGIUM
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
361
Lastpage
368
Abstract
The degradation and wearout of thin dielectric layers during charge injection is an important reliability issue. In this paper the oxide field dependence of the trapping and defect generation during injection of electrons or holes is investigated. The generation of slow trapping instabilities during electrical stressing, the charge build-up and degradation during high-field stressing and the trapping characteristics of nitrided oxide layers are also discussed.
Keywords
Charge carrier processes; Charge measurement; Current measurement; Degradation; Density measurement; Dielectrics; Electron traps; MOSFETs; Pulse measurements; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436340
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