From the physics to the Spice equivalent circuits. Application to a microwave GaAs-HBT

Author

López-González, Juan Miguel ; Garcias-Salvà, Pau ; Vinas, Lluis Prat

Author_Institution

Grup de Dispositius Semicond., Univ. Politecnica de Catalunya, Barcelona, Spain

Volume

1

fYear

2001

fDate

2001

Firstpage

133

Abstract

In this paper, the parameters of the different equivalent circuits (DC, AC and transient) of the Spice bipolar transistor model are obtained for a real GaAs HBT by making use of a compact model of the semiconductor device. The input of the device model are the physical properties of the semiconductor materials and the geometry of the device

Keywords

III-V semiconductors; SPICE; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; AC equivalent circuit; AlGaAs-GaAs; DC equivalent circuit; GaAs/AlGaAs HBT; Spice equivalent circuits; bipolar transistor model; compact model; device geometry; large-signal equivalent circuit; material physical properties; microwave HBT; semiconductor device; transient equivalent circuit; Bipolar transistors; Equivalent circuits; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Physics; Power amplifiers; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967430

Filename

967430