Optimization of InGaAsN on GaAs(111)B for semiconductor laser devices

Author

Miguel-Sánchez, J. ; Guzman, Armando ; Ulloa, J.M. ; Hierro, A. ; Munoz, Eugenio

Author_Institution

Dept. de Ingenieria Electronica, Univ. Politecnica de Madrid, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

319

Lastpage

322

Abstract

In this work we present our contribution to the optimization of the InGaAsN material grown on misoriented GaAs(111)B substrates. We show the improvement of optical quality after characterization and optimization of plasma parameters. In addition, our growth procedure to avoid N induced damage on the surface is presented. Finally, we show the improvement in the optical emission of InGaAsN p-i-n diodes after post-growth rapid thermal annealing. Our results show that the quality of the material is high enough to start to develop laser devices based on InGaAsN on GaAs(111)B.

Keywords

III-V semiconductors; boron compounds; gallium arsenide; indium compounds; optimisation; p-i-n diodes; rapid thermal annealing; semiconductor growth; semiconductor lasers; substrates; InGaAsN-GaAsB; growth procedure; optical emission; optical quality; p-i-n diodes; plasma parameters optimization; rapid thermal annealing; semiconductor laser devices; Gallium arsenide; Nitrogen; Optical materials; Plasma materials processing; Plasma temperature; Plasma x-ray sources; Semiconductor lasers; Stimulated emission; Substrates; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Conference_Location

Tarragona

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504392

Filename

1504392