• DocumentCode
    1932672
  • Title

    Electron conduction and charge trapping behaviour of SiO2 prepared by plasma anodisation

  • Author

    Zhang, J.F. ; Watkinson, P. ; Taylor, S. ; Eccleston, W. ; Young, N.D.

  • Author_Institution
    Department of Electrical Engineering and Electronics, University of Liverpool, P.O. Box 147, Liverpool, L69 3BX.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    265
  • Lastpage
    268
  • Abstract
    Fowler-Nordheim tunneling of electrons dominates the electron conduction mechanism in low temperature plasma grown silicon dioxide. Avalanche injection studies yield typical trap capture cross-sections of 10-15 and 10-17 cm2 following anodisation. If a high temperature post-oxidation anneal is used then the only capture cross-section observed has a value 10-18 cm2.
  • Keywords
    Electron traps; Oxidation; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Temperature dependence; Temperature distribution; Thermal conductivity; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932672