A 0.13 µm SiGe BiCMOS technology for mm-wave mixed-signal applications

Author

Rücker, Holger ; Heinemann, Bernd ; Mai, Andreas ; Tillack, Bernd

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2009

fDate

25-27 June 2009

Firstpage

19

Lastpage

22

Abstract

We present a SiGe BiCMOS technology featuring high-speed HBTs with peak transit frequencies f_T of 240 GHz and maximum oscillation frequencies f_max of 330 GHz at breakdown voltages of BV_CEO = 1.7 V. The high-speed HBTs are integrated in a 0.13 mum RF CMOS process along with high-voltage HBTs (f_T = 40 GHz, f_max = 120 GHz, BV_CEO = 4.5 V) and a set of passive RF components. CML ring oscillator gate delays of 2.9 ps are demonstrated.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; millimetre wave integrated circuits; mixed analogue-digital integrated circuits; BiCMOS technology; CML ring oscillator gate delays; SiGe; frequency 240 GHz; frequency 330 GHz; high-speed HBT; maximum oscillation frequencies; mm-wave mixed-signal applications; peak transit frequencies; size 0.13 mum; voltage 1.7 V; BiCMOS integrated circuits; CMOS process; CMOS technology; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Millimeter wave technology; Radio frequency; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave devices; Silicon alloys; Silicon bipolar/BiCMOS process technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference

Conference_Location

Lodz

Print_ISBN

978-1-4244-4798-5

Electronic_ISBN

978-83-928756-1-1

Type

conf

Filename

5289470