P-channel etched-groove Si permeable base transistors

For high-speed complementary logic using permeable base transistors (PBTs) p-channel devices are needed. For the first time the simulation and fabrication of this kind of transistors are reported. Two-dimensional computer modeling indicate that in general p-channel PBTs reach up to 75% of the transit frequency of their n-channel counterparts. First experimental devices with 0.3¿m finger size exhibited a transconductance of 30mS/mm.