Monte Carlo characterization of fabricated partially-depleted SOI MOSFETs: high-frequency performance

Author

Rengel, Raúl ; Martin, María J. ; Pailloncy, Guillaume ; Dambrine, Gilles ; Danneville, Franqois

Author_Institution

Departamento de Fisica Aplicada, Univ. de Salamanca, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

373

Lastpage

376

Abstract

This paper addresses a Monte Carlo (MC) investigation of fabricated partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. Numerical results show a good agreement to the main high-frequency figures of merit of the transistor, providing at the same time an advanced understanding of the electronic charge transport processes by means of the main internal quantities of interest. The excellent performance of the devices investigated (with NF_min of 0.4 dB at 6 GHz) makes them feasible candidates to be used in RF and microwave analog applications.

Keywords

MOSFET; Monte Carlo methods; high-frequency effects; semiconductor device models; silicon-on-insulator; transport processes; 0.4 dB; 6 GHz; Monte Carlo characterization; electronic charge transport; figures of merit; high frequency performance; partially depleted SOI MOSFET; silicon on insulator; Acoustic noise; Insulation; Isolation technology; MOSFETs; Microwave transistors; Monte Carlo methods; Noise measurement; Radio frequency; Silicon on insulator technology; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Conference_Location

Tarragona

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504408

Filename

1504408