• DocumentCode
    1933451
  • Title

    Sensing properties of tellurium based films to propylamine

  • Author

    Tsiulyanu, D. ; Marian, S. ; Miron, V. ; Liess, H.-D.

  • Author_Institution
    Dept. of Phys., Tech. Univ., Kishinau, Moldova
  • Volume
    2
  • fYear
    2001
  • fDate
    37165
  • Firstpage
    287
  • Abstract
    The effect of propylamine (C3H7NH2) on electrical conductivity of tellurium based thin films has been investigated. It is shown that the absorption of the propylamine vapor leads to reversible increase of resistance of the layer. The sensitivity as well as response and recovery times depends on the gas concentration. The structural characterization of the films and discussion are given
  • Keywords
    crystal structure; electrical conductivity; gas sensors; organic compounds; semiconductor materials; semiconductor thin films; tellurium compounds; C3H7NH2; absorption; electrical conductivity; gas concentration; propylamine; propylamine vapor; recovery times; resistance; response; sensing properties; structural characterization; tellurium based films; Absorption; Chemical sensors; Electric resistance; Physics; Pollution measurement; Scanning electron microscopy; Substrates; Surface morphology; Tellurium; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2001. CAS 2001 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-6666-2
  • Type

    conf

  • DOI
    10.1109/SMICND.2001.967466
  • Filename
    967466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933451