A low power 0.3–3.8 GHz low-noise mixer with noise cancellation

Author

Changguo Shen ; Zhiqun Li

Author_Institution

Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China

fYear

2012

fDate

18-20 Sept. 2012

Firstpage

1

Lastpage

4

Abstract

This paper shows a low power low-noise mixer in RFCMOS 0.18μm technology that operates between 0.3-3.8GHz. The low power mixer has a Gilbert cell configuration which employs low-noise transconductors designed using the noise-cancelling technique. And the low-noise amplifier designs use the current-reused topology to reduce power consumption and employ a capacitive cross-coupled (CCC) gm-boosting to improve noise performance. This merged front-end achieves 11~17dB power conversion gain, a flat SSB noise figure of 7.3~11dB with IF 2MHz over the whole working range. It only consumes 1.69mA current from a 1.8V supply and its active area occupies only 0.04mm².

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; MMIC mixers; field effect MMIC; low noise amplifiers; low-power electronics; CCC gm-boosting; Gilbert cell configuration; RF CMOS technology; capacitive cross-coupled gm-boosting; current 1.69 mA; current-reused topology; flat SSB noise figure; frequency 0.3 GHz to 3.8 GHz; frequency 2 MHz; gain 11 dB to 17 dB; low-noise amplifier designs; low-noise transconductors; low-power low-noise mixer; noise figure 7.3 dB to 11 dB; noise-cancelling technique; power consumption reduction; power conversion gain; size 0.18 mum; voltage 1.8 V; Impedance matching; Mixers; Noise cancellation; Power demand; Topology; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Conference_Location

Nanjing

Print_ISBN

978-1-4673-0901-1

Electronic_ISBN

978-1-4673-0903-5

Type

conf

DOI

10.1109/IMWS2.2012.6338178

Filename

6338178