• DocumentCode
    1933836
  • Title

    Submicron pseudomorphic Al0.2 Ga0.8As/In0.25Ga0.75 As-HFET made by conventional optical lithography for microwave circuit applications above 100GHz

  • Author

    Meschede, H. ; Kraus, J. ; Bertenburg, R. ; Brockerhoff, W. ; Prost, W. ; Heime, K. ; Nickel, H. ; Schlapp, W. ; Losch, R.

  • Author_Institution
    Universitÿt -GH- Duisburg, Halbleitertechnik/Halbleitertechnologie, SFB 254, Kommandantenstr. 60, D-4100 Duisburg 1
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    In this work the device performance of a submicrometer pseudomorphic FET made by conventional optical lithography using a single-layer photoresist will be presented. With this technique a gate-length of 0.6¿m can be reproducible achieved. Using a multiple finger structure with air-bridge technology a maximum taransconductance of 47OmS/mm and a cutoff-frequency of 111GHz was obtained.
  • Keywords
    FETs; Fingers; Gold; Lithography; Metallization; Microwave circuits; Nickel; Optical devices; Positron emission tomography; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933836