• DocumentCode
    1934089
  • Title

    Analytical model for circuit simulation with quarter micron MOSFETs: subthreshold characteristics

  • Author

    Miura-Mattausch, M. ; Jacobs, H.

  • Author_Institution
    Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, Munich 83
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    153
  • Lastpage
    156
  • Abstract
    We show a new simple model which includes the gradient of the lateral electric field analytically. The model describes the subthreshold characteristics relating to short-channel effects correctly down to 0.1 ¿m. effective channel length Leff with physical parameters (Nsub, Cox, Vfb, ¿f)taken from the long-channel device.
  • Keywords
    Analytical models; Charge measurement; Circuit simulation; Current measurement; Density measurement; Electric variables measurement; MOSFETs; Poisson equations; Position measurement; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436425
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1934089