DocumentCode
1934111
Title
A charge and capacitance model for modern MOSFETs
Author
Smedes, T. ; Klaassen, F.M.
Author_Institution
Eindhoven University of Technology, Faculty of Electrical Engineering, Electron Devices Group, P.O.Box 513, 5600 MB Eindhoven, the Netherlands.
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
141
Lastpage
144
Abstract
A new physical, compact charge and capacitance model for long to submicron size MOSFETs is presented. It includes the important short channel effects and the effets of parasitic elements present in modern MOSFETs. The model is compared with numerical device simulations and measurements on actual devices. Good agreement is found between modelling, simulation and measurement.
Keywords
Circuit simulation; Degradation; Doping profiles; Electron devices; Laboratories; MOSFETs; Modems; Numerical simulation; Parasitic capacitance; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436426
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