DocumentCode
1934122
Title
Electron velocity overshoot in sub-micron silicon MOS transistors
Author
Elias, P J H ; van de Roer, Th G ; Klaassen, F.M.
Author_Institution
Eindhoven University of Technology, Faculty of Electrical Engineering, Electron Devices Group, P.O.Box 513, 5600 MB Eindhoven, the Netherlands.
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
145
Lastpage
148
Abstract
A l-D non-stationary hydrodynamic transport model is presented. Simulation results of n+-n-n+ drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transistors show velocity overshoot in the channel. These results are compared with experimental data and a good agreement is found.
Keywords
Acoustic scattering; Effective mass; Electron mobility; Hydrodynamics; Impact ionization; MOSFETs; Monte Carlo methods; Optical scattering; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436427
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