Epitaxial layer transfer using thin film Sn soldering, suitable for hybrid integration in a coplanar technology

Author

Avramescu, Viorel ; Hjort, Klas

Author_Institution

Nat. R&D Inst. in Microtechnologies, Bucharest, Romania

Volume

2

fYear

2001

fDate

37165

Firstpage

395

Abstract

Hard solders have been used for over 35 years for high reliable die attach and include eutectic alloys of Au-Si, Au-Ge and Au-Sn, which have melting temperature of 383°C, 361°C and 280°C respectively. This work presents a bonding technique that involves the use of a thin Sn layer (< μm) as a soldering material between two surfaces having thin Au metallization. The technique has been applied for the integration of an epitaxial layer thin film A_IIIB_V semiconductor device into a silicon coplanar waveguide technology suitable for high frequency applications

Keywords

III-V semiconductors; coplanar waveguides; elemental semiconductors; gold; metallisation; semiconductor epitaxial layers; silicon; soldering; tin; Au metallization; III-V semiconductor device; Si-Au; Sn; Sn thin film soldering; bonding technique; epitaxial layer transfer; high frequency applications; hybrid integration; silicon coplanar waveguide technology; Bonding; Epitaxial layers; Gold; Inorganic materials; Microassembly; Semiconductor materials; Soldering; Temperature; Tin; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967492

Filename

967492