• DocumentCode
    1934305
  • Title

    An improved model of plasma etching including temperature dependence: comparison between simulation and experimental results

  • Author

    Gérodolle, A. ; Pelletier, J. ; Drouot, S

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, BP 98, 38243 Meylan cedex, France
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    209
  • Lastpage
    212
  • Abstract
    The temperature dependence of the plasma etching of silicon by SF6 has been studied. A purely reactive model involving a few parameters is presented. Parameter values are extracted from experimental data, and results of the simulations carried out with these parameters are compared with the experimental profiles.
  • Keywords
    Equations; Plasma applications; Plasma simulation; Plasma temperature; Silicon; Solid modeling; Sputter etching; Sputtering; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1934305