DocumentCode
1934825
Title
Investigation on operation of silicon power devices in the breakdown region of electrical characteristic
Author
Obreja, Vasile V N
Author_Institution
Nat. R&D Inst. for Microtechnology, Bucharest, Romania
Volume
2
fYear
2001
fDate
37165
Firstpage
485
Abstract
The surface component of reverse current is a serious cause of limitation for the operation at high junction temperature of present-day available silicon high voltage devices, in the breakdown region of their electrical I-V characteristic. Improved device performance can be achieved by minimizing this component through advanced junction passivation techniques
Keywords
elemental semiconductors; passivation; power semiconductor diodes; semiconductor device breakdown; silicon; I-V characteristics; Si; breakdown region; high voltage devices; junction surface effects; passivation; power dissipation; reverse current; Breakdown voltage; Diodes; Electric breakdown; Electric variables; Manufacturing; Passivation; Power dissipation; Research and development; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967511
Filename
967511
Link To Document