• DocumentCode
    1934960
  • Title

    Hot carrier stress in deep submicrometer MOSFET´s

  • Author

    Cretu, B. ; Balestra, F. ; Ghibaudo, G.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
  • Volume
    2
  • fYear
    2001
  • fDate
    37165
  • Firstpage
    507
  • Abstract
    Hot carrier stress was performed for various bulk CMOS technologies. They underwent accelerated electrical stress by applying different gate biases and drain voltages in order to evaluate hot carrier degradation of the main electrical parameters. The worst case aging, device lifetime and maximum drain bias that can be applied are addressed
  • Keywords
    MOSFET; ageing; hot carriers; CMOS technology; aging; deep submicron MOSFET; device lifetime; drain bias; electrical parameters; hot carrier stress; CMOS technology; Charge carrier processes; Degradation; Hot carriers; Impact ionization; Interface states; MOSFET circuits; Stress; Substrates; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2001. CAS 2001 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-6666-2
  • Type

    conf

  • DOI
    10.1109/SMICND.2001.967516
  • Filename
    967516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1934960