DocumentCode
1935024
Title
Modeling of Single and Double Gate Thin Film SOI MOSFETs
Author
Balestra, F. ; Ghibaudo, Gerard ; Benachir, M. ; Brin, J.
Author_Institution
Laboratoire de Physique des Composants Ã\xa0 semiconducteurs (UA-CNRS), ENSERG/INPG, 23 av. des Martyrs, 38016 Grenoble (France)
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
889
Lastpage
892
Keywords
Analytical models; Capacitance; Intersymbol interference; MOSFETs; Semiconductor device reliability; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436460
Link To Document