• DocumentCode
    1935087
  • Title

    Explanation for the Negative Differential Resistance in SOI-MOSFETs

  • Author

    Mcdaid, J. ; Hall, S. ; Mellor, P.H. ; Eccleston, W. ; Alderman, J.C.

  • Author_Institution
    The University of Liverpool, Department of Electrical Engineering and Electronics, Brownlow Hill, P.O. Box 147, Liverpool, L69 3BX.
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    885
  • Lastpage
    888
  • Abstract
    The negative resistance region seen in the output characteristics (IDS(VGS) vs vDS) of silicon-on-insulator MOSFETs to be a result of the relatively poor thermal properties of the buried insulator compared with the Si-substrate. At sufficiently high power levels, the device island heats up causing degradation of the carrier mobility and a consequent limiting of the outptrt current This thermal self-limiting is also responsible for the deaparture from the ideal MOSFET ``square´´ law which should be evident for these transistors having minimal ``body´´ effect.
  • Keywords
    Conductive films; Equations; Immune system; Insulation; MOSFETs; Semiconductor films; Silicon on insulator technology; Thermal resistance; Thin film devices; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1935087