Epitaxial praseodymium oxide: a new high-k dielectric

Author

Osten, H. Jorg ; Bugiel, Eberhard ; Fissel, A. ; Guminskaya, T. ; Liu, J. Ping ; Mussig, H.J. ; Zaumseil, P.

Author_Institution

IHP, Frankfurt, Germany

fYear

2001

fDate

1-2 Nov. 2001

Firstpage

100

Lastpage

106

Abstract

Praseodymium oxides, Pr₂0₃, grown epitaxially on Si(001) is a promising candidate for highly scaled gate insulators, displaying sufficiently high-K value of 31, ultralow leakage current density good reliability, and reversible electrical breakdown. The Pr₂0₃/Si(001) interface exhibits the symmetric band alignment, desired for applying such material in both n- and p-type devices. The valence band as well as the conduction band offset to Si are in the order 1 eV. The electron masses in the oxide have to be very heavy. This effect together with the suitable band offsets leads to the unusually low leakage currents.

Keywords

CMOS integrated circuits; conduction bands; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; leakage currents; molecular beam epitaxial growth; permittivity; praseodymium compounds; valence bands; CMOS applications; CMOS gate insulators; CMOS process flow; MBE system; Pr/sub 2/O/sub 3/ scaled gate insulators; Pr/sub 2/O/sub 3/-Si; Si; band offsets; conduction band offset; epitaxial praseodymium oxide high-k dielectric; leakage current density; leakage currents; n-type devices; oxide electron masses; p-type devices; reliability; reversible electrical breakdown; symmetric band alignment; valence band offset; Capacitance; Conducting materials; Dielectric constant; High-K gate dielectrics; Leakage current; Photonic band gap; Silicon compounds; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-021-6

Type

conf

DOI

10.1109/IWGI.2001.967555

Filename

967555