Electromigration Control: the Accelerated BEM (Breakdown Energy of Metals) Test

We have used a current ramp based method (BEM) to study the electromigration response of metal lines prepared under different experimental conditions. The samples were all A11% Si; BEM discriminated among the metallizations prepared with different sputterirng systems: a better behavior was obtained for films prepared in high vacuum and with a fast deposition rate. Furthermore we have characterizad the use of both DC and RF blas for Al planarization. The results show a loss of reliability due to the bias induced crystallographic disorder of the Al structure.