DocumentCode
1936168
Title
Charge Transport Near the Si/SiO2 Interface in MOSFET Devices
Author
Vogelsang, Th. ; Hansch, Walter ; Kircher, R.
Author_Institution
Siemens AG, Corporate Research and Development, ZFE ELPT
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
687
Lastpage
690
Abstract
The influence of quantum mechanical corrections of particle density near the Si/SiO2 interface on the channel mobility of a MOSFET is investigated by an approximation of the quantum statistical expectation values and by an exact solution of Schrödinger´s equation perpendicular to the interface. A new model for mobility reduction at the interface is derived. The model is implemented in the device simulator MINIMOS, the results show good agreement with n-and p-channel devices of the 4M-DRAM generation.
Keywords
Current density; Differential equations; Electric potential; MOSFET circuits; Particle scattering; Poisson equations; Quantum mechanics; Scattering parameters; Schrodinger equation; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436508
Link To Document