DocumentCode
1936309
Title
Comparison Between Different Intermetallic Dielectric Processes and Consequences on Field Transistor Behaviour
Author
Deleonibus, Simon ; Arena, C. ; Heitzmann, M. ; Martin, F. ; Lajzerowicz, J. ; Vinet, F.
Author_Institution
LETI CENG Avenue des Martyrs, 38041 Grenoble Cedex France.
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
665
Lastpage
668
Keywords
Aluminum; Channel bank filters; Dielectrics; Hydrogen; Intermetallic; MOS devices; Metal-insulator structures; Random access memory; Voltage; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436515
Link To Document