DocumentCode
1936350
Title
Electromigration in Narrow Al(Si) Stripes for VLSI: Comparison between MTF and Resistometric Methods for Life Predictions
Author
Specchiulli, G. ; Fantini, F. ; De Santi, G.
Author_Institution
Telettra S.p.A., Quality and Reliability Dept. - 20059 Vimercate-Italy
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
217
Lastpage
220
Abstract
Al (1% Si) electromigration in narrow stripes was studied by means of MFT and resistometric methods. For very narrow stripes no correlation could be found between the variation of resistance and the end of life. A simple model was developed to explain the observed small resistance variation.
Keywords
Electromigration; Equivalent circuits; FETs; Frequency; Gallium arsenide; MESFETs; Microwave devices; Mutual coupling; Scattering parameters; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436517
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