Carrier transport in a single GaAs quantum wire structure studied by time-resolved near-field spectroscopy

Author

Richter, A. ; Suptitz, M. ; Lienau, C. ; Elsaesser, T. ; Ramsteiner, M. ; Notzel, R. ; Ploog, K.H.

Author_Institution

Max-Born-Inst. fur Nichtlineare Opt. & Kurzzeitspektroskopie, Berlin, Germany

fYear

1998

fDate

8-8 May 1998

Firstpage

87

Abstract

Summary form only given.Direct studies of the transport of photogenerated electron-hole pairs in semiconductor nanostructures require both high spatial and temporal resolution. Near-field scanning optical microscopy (NSOM), offering subwavelength spatial resolution in the 100-nm range in combination with time-resolved detection schemes is a particularly promising technique for such experiments. Here we report on the first time-resolved near-field spectroscopic investigation of the carrier dynamics in single gallium arsenide (GaAs)/(AlGa)As sidewall quantum wires.

Keywords

III-V semiconductors; gallium arsenide; semiconductor quantum wires; time resolved spectra; GaAs quantum wire; GaAs-AlGaAs; carrier transport; near-field scanning optical microscopy; semiconductor nanostructure; time-resolved near-field spectroscopy; Absorption; Delay; Fiber lasers; Gallium arsenide; Luminescence; Photoluminescence; Probes; Spatial resolution; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680179

Filename

680179