• DocumentCode
    1936635
  • Title

    Interface characterization of thin ZrO2/SiO2 films on silicon

  • Author

    Maeda, Takeshi ; Fukuda, Seiichi ; Kat, Yoshitake

  • Author_Institution
    Semicond. Leading Edge Technol. Inc., Ibaraki, Japan
  • fYear
    2001
  • fDate
    1-2 Nov. 2001
  • Firstpage
    210
  • Lastpage
    211
  • Abstract
    In this study, we investigated the properties of thin ZrO/sub 2//SiO/sub 2/ films on silicon using XPS, SIMS, backside (BS-) SIMS and TEM-EDX, focusing on the diffusion of the Zr into the Si substrate. The thermal stability of these films was also discussed.
  • Keywords
    X-ray photoelectron spectra; chemical interdiffusion; secondary ion mass spectra; semiconductor-insulator boundaries; silicon; silicon compounds; transmission electron microscopy; zirconium compounds; SIMS; Si; Si substrate; SiO/sub 2/; TEM-EDX; XPS; ZrO/sub 2/; diffusion; interface characterization; thermal stability; thin ZrO/sub 2//SiO/sub 2/ films; Annealing; Atomic measurements; Dielectrics; Etching; Hafnium; MOSFET circuits; Semiconductor films; Silicon; Sputtering; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-021-6
  • Type

    conf

  • DOI
    10.1109/IWGI.2001.967585
  • Filename
    967585
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936635