Effect of Ge deposition rate on growth and optical properties of Ge(Si)/Si(001) self-assembled islands

Author

Shaleev, Mikhail V. ; Krasilnik, Zakhary F. ; Lobanov, Dmitriy N. ; Novikov, Alexey V. ; Vostokov, Nikolay V. ; Yablonsky, A.N.

Author_Institution

Inst. for Phys. of Microstruct., Nizhny Novgorod State Univ., Russia

fYear

2004

fDate

1-5 July 2004

Firstpage

24

Lastpage

26

Abstract

In this paper we study the growth and photoluminescence spectra of GeSi/Si(001) self-assembled islands grown in wide range of Ge deposition rate (ν_Ge=0.1÷0.75 Å/s). AFM studies of these structures revealed that for all Ge growth rates the dominant island species is the dome-shaped islands. It was found that the lateral size of dome islands is decreased and their surface density is increased with increasing of ν_Ge. The decreasing of the lateral size is connected to increasing of Ge content in islands and part of surface occupied by the islands. The red-shift of the island related photoluminescence peak was observed during the island Ge growth rate increasing. This shift is associated with increasing of Ge content in islands.

Keywords

atomic force microscopy; elemental semiconductors; germanium; island structure; molecular beam epitaxial growth; photoluminescence; self-assembly; semiconductor epitaxial layers; semiconductor growth; spectral line shift; surface morphology; AFM; Ge-Si; dome-shaped islands; gallium deposition rates; molecular beam epitaxial growth; optical properties; photoluminescence spectra; red shift; self-assembled islands; surface density; Atomic force microscopy; Epitaxial growth; Germanium; Photoluminescence; Semiconductor epitaxial layers; Semiconductor growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on

Print_ISBN

5-7782-0463-9

Type

conf

DOI

10.1109/PESC.2004.241011

Filename

1358278