DocumentCode
1938284
Title
Resonant tunneling diodes for multi-valued digital applications
Author
Lin, H.C.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear
1994
fDate
25-27 May 1994
Firstpage
188
Lastpage
195
Abstract
Resonant tunneling diodes (RTD) have unique folding V-I characteristics, which lend themselves to multi-valued applications, The negative differential resistance of RTDs renders the operating points self-latching and stable. Any positive resistance in series with an RTD can give rise to hysteresis, especially at high frequencies, The hysteresis effect limits the operation of some multi-valued circuits, but can be utilized to produce some useful functions in other applications. In most applications, the input connection and the output connection are sequentially clocked to achieve isolation. An RTD can achieve higher operating frequency operation than conventional devices, and the maximum operating frequency is often limited by the dynamic hysteresis effect
Keywords
logic devices; tunnel diodes; hysteresis; maximum operating frequency; multi-valued circuits; multi-valued digital applications; negative differential resistance; operating frequency; resonant tunneling diodes; Clocks; Diodes; Educational institutions; Frequency; Hysteresis; Multivalued logic; RLC circuits; Resonant tunneling devices; Semiconductor materials; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Multiple-Valued Logic, 1994. Proceedings., Twenty-Fourth International Symposium on
Conference_Location
Boston, MA
Print_ISBN
0-8186-5650-6
Type
conf
DOI
10.1109/ISMVL.1994.302201
Filename
302201
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