• DocumentCode
    1938354
  • Title

    Simulation of trench filling process

  • Author

    Gutova, Alla G. ; Neizvestny, Igor G. ; Shwartz, Natalia L. ; Yanovitskaja, Zoya Sh ; Zverev, Alexey V.

  • Author_Institution
    Inst. of Semicond., Novosibirsk State Univ., Russia
  • fYear
    2004
  • fDate
    1-5 July 2004
  • Firstpage
    42
  • Lastpage
    45
  • Abstract
    Investigation of deep gaps filling during deposition processes were carried out using Monte Carlo simulation. Critical deposition conditions separating complete and incomplete gap filling and dependence of critical deposition conditions on geometrical size of trench were obtained. The quality of gap fill was demonstrated to be dependent not only on deposition conditions but on the chemical nature of adsorbate as well. For nanotrench of definite size there is critical binding energy adsorbate-adsorbate for the given deposition parameters providing high-quality filling.
  • Keywords
    Monte Carlo methods; ULSI; adsorbed layers; binding energy; isolation technology; self-diffusion; semiconductor growth; semiconductor process modelling; Monte Carlo simulation; ULSI; adsorbate chemical nature; adsorbate-adsorbate critical binding energy; deposition processes; geometrical trench size; trench filling process simulation; Diffusion processes; Isolation technology; Monte Carlo methods; Semiconductor growth; Semiconductor process modeling; Ultra-large-scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
  • Print_ISBN
    5-7782-0463-9
  • Type

    conf

  • DOI
    10.1109/PESC.2004.241018
  • Filename
    1358285