DocumentCode
1938354
Title
Simulation of trench filling process
Author
Gutova, Alla G. ; Neizvestny, Igor G. ; Shwartz, Natalia L. ; Yanovitskaja, Zoya Sh ; Zverev, Alexey V.
Author_Institution
Inst. of Semicond., Novosibirsk State Univ., Russia
fYear
2004
fDate
1-5 July 2004
Firstpage
42
Lastpage
45
Abstract
Investigation of deep gaps filling during deposition processes were carried out using Monte Carlo simulation. Critical deposition conditions separating complete and incomplete gap filling and dependence of critical deposition conditions on geometrical size of trench were obtained. The quality of gap fill was demonstrated to be dependent not only on deposition conditions but on the chemical nature of adsorbate as well. For nanotrench of definite size there is critical binding energy adsorbate-adsorbate for the given deposition parameters providing high-quality filling.
Keywords
Monte Carlo methods; ULSI; adsorbed layers; binding energy; isolation technology; self-diffusion; semiconductor growth; semiconductor process modelling; Monte Carlo simulation; ULSI; adsorbate chemical nature; adsorbate-adsorbate critical binding energy; deposition processes; geometrical trench size; trench filling process simulation; Diffusion processes; Isolation technology; Monte Carlo methods; Semiconductor growth; Semiconductor process modeling; Ultra-large-scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN
5-7782-0463-9
Type
conf
DOI
10.1109/PESC.2004.241018
Filename
1358285
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