• DocumentCode
    1938875
  • Title

    Structure function based thermal resistance & thermal capacitance measurement for electronic system

  • Author

    Luo, Yafei

  • Author_Institution
    Gotenyama Garden, Mentor Graphics Japan Co., Ltd., Tokyo, Japan
  • fYear
    2010
  • fDate
    24-26 Aug. 2010
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Traditional thermal conductivity measurement such as laser-flash method for thermal-conductivity measurement is limited to homogenous materials or limited geometry, therefore, such method is not suitable for characterizing real semiconductor packages which have complex heat flow structure. In this paper, we are going to introduce structure function based evaluation of the thermal transient measurements, which is most appropriate for the characterization of heat flow path in complex semiconductor packages. The structure functions are “graphical” representations of the RC-model of thermal systems. With the help of structure function one can determine partial thermal resistances and partial thermal capacitances in a heat flow path not only inside the device package like die attach, but also outside electronic components like PCB board, surface-air boundary layer, contact thermal resistance etc., with high accuracy.
  • Keywords
    capacitance measurement; microassembling; printed circuits; semiconductor device packaging; thermal resistance measurement; PCB board; complex semiconductor packages; contact thermal resistance; die attach; electronic components; electronic system; heat flow path; partial thermal capacitances; partial thermal resistances; surface-air boundary layer; thermal capacitance measurement; thermal resistance measurement; thermal system RC-model; thermal systems; thermal transient measurements; Electrical resistance measurement; Electronic packaging thermal management; Heating; Semiconductor device measurement; Temperature measurement; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CPMT Symposium Japan, 2010 IEEE
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-7593-3
  • Type

    conf

  • DOI
    10.1109/CPMTSYMPJ.2010.5680286
  • Filename
    5680286