DocumentCode
1941722
Title
High-speed silicon modulators
Author
Tao Chu ; Xi Xiao ; Hao Xu ; Xianyao Li ; Zhiyong Li ; Jinzhong Yu ; Yude Yu
Author_Institution
Key Lab. of Integrated Optoelectron., Inst. of Semicond., Beijing, China
fYear
2013
fDate
22-26 Sept. 2013
Firstpage
1
Lastpage
3
Abstract
Based on SOI waveguides and CMOS processing technology, several high-speed silicon modulators are demonstrated, including a 60-Gbps MZI modulator with 1.6-dB optical loss, a 25-Gbps microring modulator with misalignment-tolerant interleaved PN junctions, a 60-Gbps microring resonator modulator and a 4×50 Gbps WDM modulator.
Keywords
CMOS integrated circuits; Mach-Zehnder interferometers; elemental semiconductors; integrated optoelectronics; micro-optomechanical devices; micromechanical resonators; optical communication equipment; optical losses; optical modulation; optical resonators; optical waveguides; p-n junctions; silicon; silicon-on-insulator; wavelength division multiplexing; CMOS processing; MZI modulator; SOI waveguides; Si; WDM modulator; bit rate 200 Gbit/s; bit rate 60 Gbit/s; high-speed silicon modulators; microring resonator modulator; misalignment-tolerant interleaved PN junctions; optical loss;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
Conference_Location
London
Electronic_ISBN
978-1-84919-759-5
Type
conf
DOI
10.1049/cp.2013.1444
Filename
6647637
Link To Document