• DocumentCode
    1941838
  • Title

    A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s

  • Author

    Kumagai, Y. ; Inatsuka, T. ; Kuroda, R. ; Teramoto, A. ; Suwa, T. ; Sugawa, S. ; Ohmi, T.

  • Author_Institution
    Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2012
  • fDate
    19-22 March 2012
  • Firstpage
    131
  • Lastpage
    136
  • Abstract
    We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10-17 - 10-17 A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and the repeatability error is 1×10-18 A. Using the test circuit, random telegraph signal of the gate leakage current and stress induced leakage current are evaluated statistically.
  • Keywords
    MOSFET; integrated circuit testing; leakage currents; MOSFET; extremely low gate leakage current measurement; random telegraph signal; statistical characteristics; stress induced leakage current; test circuit; time 80 s; Contacts; Logic gates; Switches; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4673-1027-7
  • Type

    conf

  • DOI
    10.1109/ICMTS.2012.6190631
  • Filename
    6190631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1941838