• DocumentCode
    1942732
  • Title

    Carrier Density and Inter Valence Band Absorption in InGaAs(P) Lasers

  • Author

    Hausser, S. ; Zielinski, E. ; Asada, M. ; Schweizer, H. ; Burkhard, H. ; Kuphal, E.

  • Author_Institution
    4. Physikalisches Institut, Unversitaet Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, FRG
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    1021
  • Lastpage
    1024
  • Abstract
    A method is presented that allows the determination of the carrier density in semiconductor lasers above and below threshold. This method is based on a line shape analysis of the spontaneous emission. Corresponding gain values can be calculated from the carrier density. Temperature dependent measurements of the spontaneous emission and the differential quantum efficiency allow the determination of the optical losses at laser threshold. The result is a strong influence of inter valence band absorption on the threshold of 1.65 ¿m InGaAs lasers and an extremely weak influence on 1.3¿m InGaAsP lasers.
  • Keywords
    Absorption; Charge carrier density; Loss measurement; Optical losses; Semiconductor lasers; Shape; Spontaneous emission; Stimulated emission; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436820
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1942732