DocumentCode
1943139
Title
Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation
Author
Marsh, C.D. ; Booker, G.R. ; Nejim, A. ; Giles, L.F. ; Hemment, P.L.F. ; Li, Y. ; Chater, R.J. ; Kilner, J.A. ; Wainwright, S. ; Hall, S.
Author_Institution
Dept. of Materials, University of Oxford, UK
fYear
1992
fDate
6-8 Oct. 1992
Firstpage
8
Lastpage
9
Keywords
Annealing; Chemical analysis; Electric variables measurement; Etching; Microstructure; Oxygen; Predictive models; Semiconductor device modeling; Semiconductor thin films; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1992. IEEE International
Conference_Location
Ponte Vedra Beach, FL
ISSN
1078-621X
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.1992.664770
Filename
664770
Link To Document