DocumentCode
1943265
Title
SOI Technologies : Their Past, Present and Future
Author
Haisma, J.
Author_Institution
Philips Research Laboratories, PO Box 80.000, NL-5600 JA Eindhoven, The Netherlands
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Technologies applied for silicon on insulator (SOI) are briefly described as well as their specific properties. Conditions of realizing SOI not only imply obtaining a perfect monocrystalline silicon layer but also an undamaged stack of (SOI) layers and a defect-free substrate. Technological problems encountered by applying the various SOI techniques are described and discussed in some detail. Past, present and future of SOI will be evaluated in some aspects.
Keywords
CMOS technology; Free electron lasers; Gas lasers; Insulation; Laboratories; Lamps; Laser theory; Power lasers; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436847
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