• DocumentCode
    1943360
  • Title

    An Improved Fully CMOS Compatible Bipolar Structure

  • Author

    Gerodolle, A. ; Giroult, G. ; Martin, S. ; Nouailhat, A.

  • Author_Institution
    CNET/CNS, BP 98, Chemin du Vieux Ch?ne, F-38243 Meylan Cedex, France
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    A fully CMOS compatible bipolar technology is studied. 2-D process simulations of the device have been carried out before wafer processing ; comparisons of the results with experiments are presented. A new idea for making the collector, without standard epitaxy of a highly doped buried layer, is described. The 2-D simulation results enable the advantages to be checked with regard to the classical approach.
  • Keywords
    BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Chemical technology; Doping; Epitaxial growth; Etching; Implants; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1943360