AlGaAsSb/AlAsSb Bragg mirrors on InP for 1.3 and 1.55 /spl mu/m vertical cavity surface emitting lasers

Author

Almuneau, G. ; Genty, F. ; Chusseau, L. ; Gaillard, S. ; Bertru, N. ; Jacquet, J.

Author_Institution

Univ. des Sci. et Tech. du Languedoc, Montpellier, France

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

41

Lastpage

42

Abstract

The AlGaAsSb system appears very suitable to elaborate high reflective DBRs with a low number of pairs operating at wavelengths of interest for telecommunications (1.3 and 1.55 /spl mu/m). Very high reflectivities of 99.2% at 1.56 /spl mu/m and for the first time 98.8% at 1.3 /spl mu/m have been obtained. We are now investigating this antimonide approach for fabricating monolithic VCSELs. Thus the elaboration of an active layer composed of InGaAs wells encapsulated within AlGaInAs barriers is under evaluation.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; laser cavity resonators; laser mirrors; laser transitions; quantum well lasers; surface emitting lasers; 1.3 mum; 1.55 mum; 1.56 mum; AlGaAsSb-AlAsSb; AlGaAsSb/AlAsSb Bragg mirrors; AlGaInAs; AlGaInAs barriers; InGaAs; InGaAs wells; InP; active layer; high reflective DBR; monolithic VCSEL; telecommunications; vertical cavity surface emitting lasers; very high reflectivities; Absorption; Aluminum; Distributed Bragg reflectors; III-V semiconductor materials; Indium phosphide; Mirrors; Photonic band gap; Reflectivity; Surface emitting lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619096

Filename

619096