DocumentCode
1943855
Title
Degradation of the Poly-Si/Silicide Structure in Advanced MOS-Technologies
Author
Lippens, P. ; Maex, K. ; Van den Hove, L. ; Keersmaecker, R. ; Probst, V. ; Koppenolc, W. ; van der Weg, W.
Author_Institution
Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, B-3030 Heverlee, Belgium
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The interaction in the system poly-Si on TiSi2 on Si and in the polycide system both with CoSi2 and TiSi2 is investigated when subjected to furnace heat treatments at high temperature. It will be shown that the first system suffers from instability due to SPE-regrowth which is partially avoided by doping the poly-Si. The polycide system shows severe roughening of the TiSi2 . However, in the case of CoSi2 , the degradation is more pronounced, viz. the Co is detected all over the poly-Si layer and this can hardly be suppressed by doping of the CoSi2 -layer.
Keywords
Degradation; Doping; Furnaces; Hafnium; Heat treatment; Microelectronics; Physics; Research and development; Silicides; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436875
Link To Document