• DocumentCode
    1943944
  • Title

    MSM waveguide photodetectors optimized for monolithic integration with HEMTs

  • Author

    Leary, M.H. ; Ballantyne, J.M.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    1993
  • fDate
    2-4 Aug 1993
  • Firstpage
    383
  • Lastpage
    390
  • Abstract
    The authors describe the design of two MSM waveguide photodetectors which share their layer structure with high electron mobility transistors. This design makes these detectors particularly suited to integration with HEMTs in OEIC´s. Resistive loss at the electrode surface, radiation loss into the substrate, and scattering loss are all accounted for in the optimization for internal detection efficiency of these 50 GHz detectors
  • Keywords
    high electron mobility transistors; integrated optoelectronics; losses; metal-semiconductor-metal structures; optical waveguides; photodetectors; 50 GHz; HEMTs; MSM waveguide photodetectors; OEIC; high electron mobility transistors; monolithic integration; radiation loss; resistive loss; scattering loss; Detectors; Electrodes; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Monolithic integrated circuits; Optical buffering; Optical waveguides; Photodetectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • Print_ISBN
    0-7803-0894-8
  • Type

    conf

  • DOI
    10.1109/CORNEL.1993.303112
  • Filename
    303112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1943944