Two layer stepped-QW channel HFETs on InP-substrate

Author

Strähle, S. ; Henle, B. ; Mittermeier, E. ; Erben, U. ; Rees, P.K. ; Kohn, E.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

1993

fDate

2-4 Aug 1993

Firstpage

494

Lastpage

503

Abstract

A novel HFET structure on InP containing an asymmetric two layer stepped QW channel sandwiched between two InAlAs barriers is proposed. A small bandgap InGaAs channel hosts the 2DEG-density and provides a low sheet resistance at low drain field. A higher bandgap sub channel of (a) InP and (b) InGaAs/InAlAs superlattice is designed to act as high field drift layer. This approach allows to obtain high f_max/f_t-ratios and high output power at high speed. First results are given

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; power transistors; semiconductor quantum wells; semiconductor superlattices; two-dimensional electron gas; 2DEG; AlInAs-InGaAs-InP; HFET structure; HFETs; InAlAs barriers; InGaAs channel; InP; InP-substrate; asymmetric two layer stepped QW channel; heterostructure FET; high field drift layer; high output power; high speed operation; low sheet resistance; quantum well channel; superlattice; Electron devices; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Knee; MODFETs; Photonic band gap; Power generation; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303123

Filename

303123