DocumentCode
1944276
Title
Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters
Author
Cheng, B. ; Moezi, N. ; Dideban, D. ; Roy, G. ; Roy, S. ; Asenov, A.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
1
Lastpage
4
Abstract
Statistical variability is a major challenge for CMOS scaling and integration. In order to achieve variability aware design, it´s critical important to reliably transfer device characteristics statistical variability information into compact models. A PCA based statistical compact modeling strategy is benchmarked against ´atomistic´ device simulation and direct statistical parameter extraction strategy. The results indicate that PCA based approach may introduce considerable error in tail of distribution, which in turn may generate pessimistic or optimistic conclusions in statistical circuit simulation.
Keywords
MOSFET; circuit simulation; nanotechnology; statistical analysis; CMOS scaling; PCA generated statistical compact model parameters; atomistic device simulation; direct statistical parameter extraction strategy; nMOSFET device; physical device simulation; statistical circuit simulation; statistical variability; transfer device characteristics; Circuit simulation; Electronic mail; MOSFET circuits; Parameter extraction; Principal component analysis; Probability distribution; Semiconductor device modeling; Semiconductor process modeling; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location
San Diego, CA
ISSN
1946-1569
Print_ISBN
978-1-4244-3974-8
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2009.5290230
Filename
5290230
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